| 摘要 |
A sensing circuit for a flash memory is provided. The sensing circuit includes a first transistor, a detector, and a charge circuit. A drain of the first transistor is coupled to a bias, a gate thereof receives an inverted signal, and a source thereof receives a data. In addition, the drain of the first transistor is further coupled to the detector. Therefore, the detector detects a voltage of the drain of the first transistor. When the voltage of the drain is lower than a threshold voltage, the detector enables a control signal. The charge circuit charges the source of the first transistor when the control signal is enabled, until the voltage of the drain of the first transistor reaches the threshold voltage. |
