发明名称 |
Fabrication of through-silicon vias on silicon wafers |
摘要 |
A through-silicon via fabrication method comprises forming a substrate by bonding the front surface of a silicon plate to a carrier using an adhesive layer therebetween to expose the back surface of the silicon plate. A silicon nitride passivation layer is deposited on the exposed back surface of the silicon plate of the substrate. A plurality of through holes are etched in the silicon plate, the through holes comprising sidewalls and bottom walls. A metallic conductor is deposited in the through holes to form a plurality of through-silicon vias.
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申请公布号 |
US8283237(B2) |
申请公布日期 |
2012.10.09 |
申请号 |
US20100978129 |
申请日期 |
2010.12.23 |
申请人 |
RAJAGOPALAN NAGARAJAN;PARK JI AE;YAMASE RYAN;PATEL SHAMIK;NOWAK THOMAS;XIA LI-QUN;KIM BOK HOEN;DING RAN;BALDINO JIM;NAIK MEHUL;RAMASWAMI SESH;APPLIED MATERIALS, INC. |
发明人 |
RAJAGOPALAN NAGARAJAN;PARK JI AE;YAMASE RYAN;PATEL SHAMIK;NOWAK THOMAS;XIA LI-QUN;KIM BOK HOEN;DING RAN;BALDINO JIM;NAIK MEHUL;RAMASWAMI SESH |
分类号 |
H01L21/30;H01L21/31;H01L21/44;H01L21/4763 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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地址 |
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