发明名称 |
Semiconductor storage device |
摘要 |
Device isolation/insulation films each have a first height within a first area and a second height higher than the first height within a second area. At least the device isolation/insulation films adjacent to a contact diffusion region exist in the second area, and the device isolation/insulation films adjacent to memory transistors exist in the first area. The device isolation/insulation films are implanted with an impurity of a first conductivity type, and device formation regions each have a diffusion region of the first conductivity type, the diffusion region being formed by diffusion of the impurity of the first conductivity type from the device isolation/insulation films. |
申请公布号 |
US8283717(B2) |
申请公布日期 |
2012.10.09 |
申请号 |
US20100886225 |
申请日期 |
2010.09.20 |
申请人 |
MATSUNAMI JUNYA;KUTSUKAKE HIROYUKI;KABUSHIKI KAISHA TOSHIBA |
发明人 |
MATSUNAMI JUNYA;KUTSUKAKE HIROYUKI |
分类号 |
H01L29/788;H01L21/22;H01L21/336;H01L21/38 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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