OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE

摘要

PURPOSE: An oxide semiconductor film and a semiconductor device are provided to improve the reliability of the semiconductor device by using the oxide semiconductor film comprising indium zinc oxide for a transistor. CONSTITUTION: An oxide semiconductor film is composed of indium zinc oxide. The oxide semiconductor film includes a hexagonal crystal structure. A first insulating film is provided between a gate electrode and the oxide semiconductor film. A source electrode and a drain electrode are contacted to the oxide semiconductor film. A second insulating film is formed on the oxide semiconductor film.