METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to highly purify an oxide semiconductor film by discharging hydrogen or water contained in the oxide semiconductor film. CONSTITUTION: A gate electrode layer(401) is formed on a substrate(400). A gate insulating layer(402) is formed on the gate electrode layer. An oxide semiconductor film(403) is formed on the gate insulating layer. A source electrode layer(405a) and a drain electrode layer(405b) are formed on the oxide semiconductor film. An insulating layer(407) is stacked on the source electrode layer and the drain electrode layer.