FABRICATION METHOD OF OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR HAVING OFFSET AND DISPLAY DEVICES AND SENSOR DEVICE APPLYING IT

摘要

PURPOSE: A method for manufacturing an oxide semiconductor thin film transistor with offset, an active operating display device thereof, and an active operating sensor device thereof are provided to form offset between a gate and a drain, the gate and a source, or the gate and a source drain, thereby eliminating parasitic capacitance. CONSTITUTION: A source(15) and a drain(16) are formed on an oxide semiconductor. Offset is formed on both the source and the drain. Parasitic capacitance is minimized between a drain and a gate. A passivation layer(17) is formed on the source and the drain. A pixel electrode(18) is formed on the passivation layer. The pixel electrode has a contact hole which contacts the drain.