| 摘要 |
<p>Provided are a crystalline film in which variations in the crystal axis angle after separation from a substrate for epitaxial growth have been eliminated, and various devices in which the properties thereof have been improved by including the crystalline film. Also provided are manufacturing methods for the crystalline film and the devices. A crystalline film having a thickness in the range of 300 µm or more and 10 mm or less is formed by epitaxial growth on a surface of a single crystal substrate, which is the substrate for epitaxial growth. The crystalline film is subsequently separated from the single crystal substrate. A reformed region pattern is formed by, when a relative position of the reformed region pattern in a thickness direction of the crystalline film in which warpage has occurred after separation is assumed to be 0% at a surface thereof on a concavely warped side and 100% at a surface thereof on a convexly warped side, concentrating a pulsed laser onto an internal portion of the crystalline film in a range of 3% or more and less than 50% in the thickness direction to scan the internal portion, and using multiphoton absorption by the pulsed laser, thereby reducing or eliminating the amount of warpage of the crystalline film and reducing or eliminating variations in the crystal axis angle.</p> |
