发明名称 SYSTEMS AND METHODS FOR INHIBITING OXIDE GROWTH IN SUBSTRATE HANDLER VACUUM CHAMBERS
摘要 <p>PURPOSE: A system and method for controlling the growth of an oxide are provided to control the deterioration of a dielectric and the oxide formation on a substrate to be transferred. CONSTITUTION: A wrist part is connected to a dark area. An end device(12) is connected to the wrist part. Housing(13) comprises a gas outlet(14). The gas outlet of the housing guides gas to the exposed surface of a substrate(8). The gas contains one between inert gas and non-reactivity gas. The housing comprises an outlet end portion, an upper portion, a bottom portion, and sidewalls. A plurality of baffles is arranged between the sidewall, the upper portion, the bottom portion, and around the gas outlet. The gas outlet comprises a slit.</p>
申请公布号 KR20120109421(A) 申请公布日期 2012.10.08
申请号 KR20120030620 申请日期 2012.03.26
申请人 NOVELLUS SYSTEMS, INC. 发明人 KHOSLA MUKUL;POWELL RONALD;KESHAVAMURTHY ARUN;BLANK RICHARD
分类号 H01L21/677 主分类号 H01L21/677
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