| 摘要 |
<p>PURPOSE: A method and apparatus for injecting ions are provided to be easily applied to different sizes and shapes of a surface in other semiconductor manufacturing process without step rotation of a wafer. CONSTITUTION: An ion beam is drawn from an ion source(1) using an extraction electrode(2). A mass analysis magnet device(3), a mass analysis slit(4) and a beam scanner(5) are arranged along a beam line. The ion beam passes through the beam line for reaching a wafer(7). A holder(8) supports the wafer. The holder is moved by a lifting device. [Reference numerals] (AA) Ion beam</p> |
