| 摘要 |
PURPOSE: A flash memory device and a method for generating a read voltage thereof are provided to improve the reliability of the flash memory device by minimizing errors in a read operation. CONSTITUTION: A program operation is performed by selecting two or more main cells among a plurality of main blocks(S430). The threshold voltage distribution of two or more main cells in which the program operation is performed is detected(S440). A trimming value is set based on the detected threshold voltage distribution(S460). A read voltage is generated using the set trimming value(S500). [Reference numerals] (AA) Start; (BB) Finish; (S410) Inputting a program command; (S420) Generating a program voltage; (S430) Executing a program operation; (S440) Verify?; (S450) Dividing programmed cells; (S460) Setting a trimming value; (S470) Storing a trimming value in a CAM cell; (S480) Inputting a read command; (S490) Reading a trimming value in a CAM cell; (S500) Generating a read voltage |
