GATE OXIDE FILM INCLUDING A NITRIDE LAYER DEPOSITED THEREON AND METHOD OF FORMING THE GATE OXIDE FILM

摘要

PURPOSE: A gate oxide film including a nitride film deposited thereon and a method for forming the gate oxide film are provided to prevent components of a high-K directive film from diffusing into an oxide film by forming a high density nitrogen blocking layer distributed at the top of the oxide film. CONSTITUTION: A gate oxide film(20) is formed on a channel region of a semiconductor substrate(10). A nitride film is deposited on the gate oxide film. The deposited nitride film is oxidized to form a barrier layer. A high-K dielectric film(30) is deposited on the oxidized nitride film. A metal gate(40) is formed on the high-K dielectric film.