METHOD FOR FORMING METAL FILM USING CARBONYL MATERIAL, METHOD FOR FORMING MULTILAYERED WIRING STRUCTURE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND FILM FORMING APPARATUS

摘要

A film forming method includes a first step of supplying a carbonyl material including a metallic element onto a surface of a substrate to be processed in a form of gas phase molecules along with a suppressor gas suppressing a decomposition of the carbonyl material, wherein a partial pressure of the suppressor gas is set to a first partial pressure at which the decomposition of the carbonyl material is suppressed; and a second step of changing the partial pressure of the suppressor gas in the surface of the substrate to a second partial pressure which causes the decomposition of the carbonyl material to thereby deposit the metallic element on the surface of the substrate.