| 摘要 |
<p>PURPOSE: A semiconductor device is provided to control the concentration of a current by forming a trench wiring in a mesh shape on the lower part of a gate pad. CONSTITUTION: A gate oxide film(11) is formed on a substrate(10). A lower wiring(7) is formed on the gate oxide film. An inter-layer insulating film(12) covers the lower wiring. First and second upper wirings(5a,5b) are formed on the inter-layer insulating film and separated from each other. A semi-insulating protective film(4) is formed to cover the first and second upper wirings.</p> |
