发明名称 |
APPARATUS AND METHOD FOR MULTIPLE SLOT ION IMPLANTATION |
摘要 |
An ion implantation system may comprise a plasma source for providing a plasma and a workpiece holder arranged to receive a bias with respect to the plasma to attract ions across a plasma sheath toward the substrate. The system may also include an extraction plate arrangement comprising a multiplicity of different apertures each arranged to provide an ion beam having ions distributed over a range of angles of incidence on the workpiece, wherein a first ion beam extracted from a first aperture has a first beam profile that differs from a second ion beam extracted from a second aperture.
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申请公布号 |
US2012248328(A1) |
申请公布日期 |
2012.10.04 |
申请号 |
US201113079369 |
申请日期 |
2011.04.04 |
申请人 |
RENAU ANTHONY;GODET LUDOVIC;MILLER TIMOTHY J.;OLSON JOSEPH C.;VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. |
发明人 |
RENAU ANTHONY;GODET LUDOVIC;MILLER TIMOTHY J.;OLSON JOSEPH C. |
分类号 |
H01J3/14;G21G5/00 |
主分类号 |
H01J3/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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