RESIST PATTERN FORMATION METHOD, AND METHOD FOR MANUFACTURING PATTERNED SUBSTRATE USING SAME

摘要

[Problem] To make it possible to prevent deviation from the design of a lithography pattern that is caused by the switching of lithograph devices, when forming a resist pattern that includes a layout with a minimum line width of 100 nm or less. [Solution] In a method for forming a resist pattern that includes a layout with a minimum line width of 100 nm or less, a resist film (2) is formed on a substrate (3), and a lithography pattern is drawn in the resist film (2) by a variable-shaped electron beam (EB), after which puddle developing of the resist film (2) is carried out so as to achieve a film decrease rate of 20% or less for the undissolved resist portion of the resist film (2).