METHOD FOR WRITING TO VARIABLE-RESISTANCE TYPE NON-VOLATILE ELEMENT AND STORAGE DEVICE

摘要

Provided is a method for writing to a variable-resistance type non-volatile storage element in which a voltage pulse is applied to a memory cell containing a variable-resistance element, to thereby reversibly vary the variable-resistance element between a first resistance state and a second resistance state by means of the polarity of the applied voltage pulse. Said method includes a step for conversion to a first resistance state including: a first step for, when the variable-resistance element is varied from the second resistance state to the first resistance state, applying to the variable-resistance element a first resistance-producing pre-voltage pulse (VLpr) that has a smaller voltage absolute value than a second voltage pulse (VL) and has different polarity than a first voltage pulse (VH); and a second step for applying the first voltage pulse (VH) after the first step.