| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid-state imaging device in which an overflow barrier is lowered, a reset voltage can be reduced, formation of dip or barrier can be suppressed in the channel, and degradation of linearity can be prevented, and to provide a camera. <P>SOLUTION: A pixel cell Cel comprises: a first conductivity type (n-type) first well 110 formed on a substrate 100; and a second conductivity type (p-type) second well 120 formed closer to the second substrate surface 102 side than the first well 110. The first well 110 functions as a light-receiving part and has a photoelectric conversion function of received light and a charge storage function. An MOS type transistor 130 detecting the stored charges in the light-receiving part of the first well 110 and having a threshold modulation function is formed in the second well 120. In the transistor 130, the gate electrode 131 is separated to a source side main gate 131M and a drain side sub-gate 131S. <P>COPYRIGHT: (C)2013,JPO&INPIT |
