发明名称 |
METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE |
摘要 |
A method for forming a semiconductor device includes the following processes. A first semiconductor chip and a second semiconductor chip are stacked to form a stacked structure. A gap between the first and second semiconductor chips of the stacked structure is filled with a filler. A temperature of the stacked first and second semiconductor chips is kept more than room temperature from the stacking to the filing.
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申请公布号 |
US2012252165(A1) |
申请公布日期 |
2012.10.04 |
申请号 |
US201213430148 |
申请日期 |
2012.03.26 |
申请人 |
NAKANOYA YUSUKE;YOSHIDA MASANORI;KUSANAGI KEIYO;ELPIDA MEMORY, INC. |
发明人 |
NAKANOYA YUSUKE;YOSHIDA MASANORI;KUSANAGI KEIYO |
分类号 |
H01L21/56 |
主分类号 |
H01L21/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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