发明名称 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
摘要 A method for forming a semiconductor device includes the following processes. A first semiconductor chip and a second semiconductor chip are stacked to form a stacked structure. A gap between the first and second semiconductor chips of the stacked structure is filled with a filler. A temperature of the stacked first and second semiconductor chips is kept more than room temperature from the stacking to the filing.
申请公布号 US2012252165(A1) 申请公布日期 2012.10.04
申请号 US201213430148 申请日期 2012.03.26
申请人 NAKANOYA YUSUKE;YOSHIDA MASANORI;KUSANAGI KEIYO;ELPIDA MEMORY, INC. 发明人 NAKANOYA YUSUKE;YOSHIDA MASANORI;KUSANAGI KEIYO
分类号 H01L21/56 主分类号 H01L21/56
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