| 摘要 |
A method for amorphizing a layer on a substrate is described. In one embodiment, the method includes treating the substrate with a first gas cluster ion beam (GCIB) using a first beam energy selected to yield an amorphous sub-layer within the substrate of a desired thickness, which produces a first interfacial roughness of an amorphous-crystal interface between the amorphous sub-layer and a crystalline sub-layer of the substrate. The method further includes treating the substrate with a second GCIB using a second beam energy, less than the first beam energy, to reduce the first interfacial roughness of the amorphous-crystal interface to a second interfacial roughness. |
