发明名称 METHOD OF MANUFACTURING A TRANSFER MASK AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
摘要 An internal defect or the like of a transfer mask is detected using transmitted light quantity distribution data of an inspection apparatus. Using a die-to-die comparison inspection method, inspection light is irradiated to a first region of a thin film to obtain a first transmitted light quantity distribution, the inspection light is also irradiated to a second region of the thin film to obtain a second transmitted light quantity distribution, a predetermined-range difference distribution is produced by plotting coordinates at which difference light quantity values calculated from a comparison between the first transmitted light quantity distribution and the second transmitted light quantity distribution are each not less than a first threshold value and less than a second threshold value, and a selection is made of a transfer mask in which a region with high density of plotting is not detected in the predetermined-range difference distribution.
申请公布号 US2012251928(A1) 申请公布日期 2012.10.04
申请号 US201213436132 申请日期 2012.03.30
申请人 TANABE MASARU;MITSUI HIDEAKI;NISHIDA NAOKI;IWASHITA SATOSHI;HOYA CORPORATION 发明人 TANABE MASARU;MITSUI HIDEAKI;NISHIDA NAOKI;IWASHITA SATOSHI
分类号 G03F1/84;G03F7/20 主分类号 G03F1/84
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