PRECURSOR FOR FORMATION OF EUROPIUM-CONTAINING THIN FILM, AND METHOD FOR FORMING EUROPIUM-CONTAINING THIN FILM

摘要

Provided are: a novel europium compound which has a melting point of 180°C or less and can be stably supplied by bubbling in a chemical vapor deposition method and in an atomic layer deposition method; a precursor for the formation of a europium-containing thin film, which is composed of the novel europium compound; and a method for forming a europium-containing thin film using the precursor. A europium-containing thin film is formed using bis(tetramethyl monoalkyl cyclopentadienyl)europium as a precursor for the formation of a europium-containing thin film by a chemical vapor deposition method or by an atomic layer deposition method.