| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device with favorable characteristics. <P>SOLUTION: There is provided a semiconductor device comprising a first element region, a second element region, and a first isolation region in a thin-film region TA1 and a third element region, a fourth element region, and a second isolation region in a thick-film region TA2. The semiconductor device is manufactured by a method comprising: (a) a step of preparing a substrate on which a silicon layer 1c is formed via an insulating layer 1b; and (b) a step of forming an element isolation insulating film 3 in the silicon layer in the first isolation region and the second isolation region of the substrate. The method further comprises: (c) a step of forming a hard mask in the thin-film region TA1; (d) a step of forming a silicon film 7 on the silicon layer of each of the third element region and the fourth element region which is exposed from the hard mask; and (e) a step of forming an element isolation insulating film 11 between the silicon film 7 of the third element region and the silicon film 7 of the fourth element region. <P>COPYRIGHT: (C)2013,JPO&INPIT |
