COPPER ANODE OR PHOSPHORUS-CONTAINING COPPER ANODE, METHOD FOR ELECTROPLATING COPPER ON SEMICONDUCTOR WAFER, AND SEMICONDUCTOR WAFER WITH PARTICLE NOT SIGNIFICANTLY DEPOSITED THEREON

摘要

PROBLEM TO BE SOLVED: To provide a copper anode or a phosphorus-containing copper anode for use in electrolytic copper plating on a semiconductor wafer.

SOLUTION: There is provided the copper anode or the phosphorus-containing copper anode for use in electrolytic copper plating on the semiconductor wafer, in which the purity of the copper anode or the phosphorus-containing copper anode excluding phosphorus is not less than 99.99% by weight, and the content of silicon as an impurity is not more than 10 ppm by weight. In electrolytic copper plating, the deposition of particles onto the semiconductor wafer can be efficiently prevented.

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