| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a thin-film transistor (TFT) array substrate which has excellent TFT characteristics and is capable of securing display quality and interlayer insulation properties of circuit wiring and the like. <P>SOLUTION: A manufacturing method of a thin-film transistor (TFT) array substrate comprises: a step of forming a pattern of an oxide semiconductor film 3 on a base material 1; a step of forming a source electrode connection region 3s and a drain electrode connection region 3d on the oxide semiconductor film; a step of forming a gate insulating film 4 covering the oxide semiconductor film; a step of opening a contact hole in the gate insulating film, connecting a source electrode 6s to the source electrode connection region and a drain electrode 6d to the drain electrode connection region, forming a gate electrode 7 on the oxide semiconductor film via the gate insulating film, and then forming a first circuit wiring group 17; a step of forming an interlayer insulating film 18 on the source electrode, drain electrode, gate electrode, and first circuit wiring group; and a step of forming a second circuit wiring group 19 on the interlayer insulating film. The thickness of the gate insulating film 4 is in the range of 100 nm to 500 nm. The thickness of the interlayer insulating film 18 is greater than or equal to 1 μm and 2 to 10 times the thickness of the gate insulating film 4. <P>COPYRIGHT: (C)2013,JPO&INPIT |
