发明名称 |
CHEMICAL MECHANICAL POLISHING OF GROUP III-NITRIDE SURFACES |
摘要 |
A method of chemically-mechanically polishing a substrate having a Group III-nitride surface includes providing a chemical-mechanical polishing slurry composition. The slurry composition includes a slurry solution including a liquid carrier and an oxidizer including a transition metal or a per-based compound. The slurry solution includes at least one component that reacts with the Group III-nitride surface to form a softened Group III-nitride surface. The Group III-nitride comprising surface is contacted with the slurry composition by a pad to form the softened Group III-nitride surface. The pad is moved relative to the softened Group III-nitride surface, wherein at least a portion of the softened Group III-nitride surface is removed.
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申请公布号 |
US2012252213(A1) |
申请公布日期 |
2012.10.04 |
申请号 |
US201113073582 |
申请日期 |
2011.03.28 |
申请人 |
SINGH RAJIV K.;ARJUNAN ARUL CHAKKARAVARTHI;SINGH DEEPIKA;MISHRA ABHUDAYA;UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.;SINMAT, INC. |
发明人 |
SINGH RAJIV K.;ARJUNAN ARUL CHAKKARAVARTHI;SINGH DEEPIKA;MISHRA ABHUDAYA |
分类号 |
H01L21/306 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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