| 发明名称 |
High voltage tolerant SCR clamp with avalanche diod triggering circuit |
| 摘要 |
In an LVTSCR, an avalanche diode based control circuit controls both the base of the internal PNP of the LVTSCR as well as the gate of the LVTSCR.
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| 申请公布号 |
US2012250194(A1) |
申请公布日期 |
2012.10.04 |
| 申请号 |
US201113065744 |
申请日期 |
2011.03.28 |
| 申请人 |
GALLERANO ANTONIO;VASHCHENKO VLADISLAV;NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
GALLERANO ANTONIO;VASHCHENKO VLADISLAV |
| 分类号 |
H02H9/04 |
主分类号 |
H02H9/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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