| 摘要 |
<P>PROBLEM TO BE SOLVED: To appropriately deposit a silicon nitride film on a substrate in low-temperature environment in which the temperature of the substrate is 100°C or lower to improve film characteristic of the silicon nitride film. <P>SOLUTION: An anode layer 20, a light emitting layer 21, a cathode layer 22 and a silicon nitride film 23 are deposited in sequence on a glass substrate G, to manufacture an organic EL device A. The silicon nitride film 23 is deposited by supplying a processing gas containing a silane gas, a nitrogen gas and a hydrogen gas to a processing vessel of a plasma deposition apparatus, exciting the processing gas to generate plasma while maintaining the temperature of the substrate inside the processing vessel at 100°C or lower and the pressure inside the processing vessel at 20-60 Pa, and applying plasma processing using the plasma. <P>COPYRIGHT: (C)2013,JPO&INPIT |
