SEMICONDUCTOR MEMORY ARRAY AND PROGRAMMING METHOD THEREOF

摘要

A flash memory array structure and a programming method thereof, belonging to the non-volatile memory technical field in the very large scale integrated circuit manufacture technology, are provided. The flash memory array includes: a plurality of memory cells, word lines and bit lines connecting to the memory cells, wherein the bit lines connecting to drain ends of the memory cells and the word lines connecting to control gates of the memory cells are not perpendicular to each other, but crossed at an angle; between every two bit lines, the control gates of the two memory cells that are adjacent to each other along the direction of the channels are respectively controlled by two word lines, the drain ends of the two memory cells are respectively controlled by two bit lines, and a source end is shared by the two memory cells. A programming method of the flash memory array structure is provided for enabling low power cost programming.