| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a non-silicon series semiconductor thin film usable for a thin film transistor, and to provide a sputtering target for forming the non-silicon series semiconductor thin film. <P>SOLUTION: An oxide sintered body is characterized in that gallium is solid-solved in indium oxide, the atomic ratio of Ga/(Ga+In) is 0.05-0.08, the content ratio of indium and gallium to the total metal atoms is ≥80 atom%, and the oxide sintered body has an In<SB POS="POST">2</SB>O<SB POS="POST">3</SB>bixbyite structure. <P>COPYRIGHT: (C)2013,JPO&INPIT |
