发明名称 PHOTORESIST COMPOSITION
摘要 <p>The purpose of the present invention is to provide a photoresist composition that fully satisfies basic properties such as sensitivity, and has excellent lithographic performance including MEEF, DOF, and LWR. This photoresist composition includes: [A] one or more types of a polymer constituent having, in identical or differing polymers, a structural unit (I) represented by formula (1), and a structural unit (II) that is a structural unit other than the structural unit (I) and includes at least one type of structure selected from the group consisting of cyclic carbonate structures, sultone structures, and lactone structures; and [B] an acid generator.</p>
申请公布号 WO2012133352(A1) 申请公布日期 2012.10.04
申请号 WO2012JP57837 申请日期 2012.03.26
申请人 JSR CORPORATION;KASAHARA KAZUKI;IKEDA NORIHIKO;NAKASHIMA HIROMITSU;YOSHIDA MASAFUMI;HORI MASAFUMI;SERIZAWA RYUICHI 发明人 KASAHARA KAZUKI;IKEDA NORIHIKO;NAKASHIMA HIROMITSU;YOSHIDA MASAFUMI;HORI MASAFUMI;SERIZAWA RYUICHI
分类号 G03F7/039;C08F220/18;H01L21/027 主分类号 G03F7/039
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