| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of improving the cutting property without deteriorating the adhesion, and provide a formation method for a wire of the semiconductor device. <P>SOLUTION: The formation method includes: a step of forming an insulation resin 4 so as to form an opening on a substrate 1; a step of forming a first wire layer 7 on the insulation resin 4 and at a side wall surface 5a and a bottom surface of the opening; a step of forming a second wire layer 8 on the first wire layer 7; and a step of performing planarization by performing cutting so as to expose the first wire layer 7 formed on the side wall surface 5a of the opening. In the step of forming the first wire layer 7, the first wire layer 7 formed at the bottom surface is formed to be thicker than the first wire layer 7 formed at the side wall surface 5a of the opening. <P>COPYRIGHT: (C)2013,JPO&INPIT |
