METHOD OF FORMING SEMICONDUCTOR STRUCTURE CONTAINING TiC FILM

摘要

PROBLEM TO BE SOLVED: To provide a method of forming a semiconductor structure containing a TiC film.

SOLUTION: The method of forming a semiconductor structure includes: providing a stack, which comprises a high dielectric constant (k) dielectric 14 and an interfacial layer 12, on a surface of a substrate 10; and forming a TiC film 16 on the stack by sputtering with a Ti target in an atmosphere comprising Ar and a carbon (C) source that is diluted with He.

COPYRIGHT: (C)2013,JPO&INPIT