发明名称 LIGHT-EMITTING DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide an active matrix type light-emitting device that can reduce reflection of light emitted in the process of extracting the light out of the light-emitting device, and prevent sufficiently diffusion of impurities from a substrate to a transistor. <P>SOLUTION: A light-emitting device includes a substrate, a first insulation layer provided on the substrate, a transistor provided on the first insulation layer, and a second insulation layer covering the transistor and having a first opening provided to expose the substrate. A light-emitting element is provided inside the first opening. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012190042(A) 申请公布日期 2012.10.04
申请号 JP20120113139 申请日期 2012.05.17
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 KAWAKAMI TAKAHIRO;HATANO KAORU;NISHI TAKESHI;HIRAKATA YOSHIHARU;KIDA KEIKO;SATO AYUMI;YAMAZAKI SHUNPEI
分类号 G09F9/30;H01L27/32;H01L51/50;H01L51/52;H05B33/00;H05B33/02;H05B33/12;H05B33/22 主分类号 G09F9/30
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