| 发明名称 |
P-ALGAN LAYER, METHOD OF MANUFACTURING THE SAME, AND GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE |
| 摘要 |
The method according to the present invention includes a first step of supplying the Group V source gas at a flow rate B1 (0<B1) and supplying the gas containing magnesium at a flow rate C1 (0<C1) while supplying the Group III source gas at a flow rate A1 (0≦̸A1); and a second step of supplying a Group V source gas at a flow rate B2 (0<B2) and supplying a gas containing magnesium at a flow rate C2 (0<C2) while supplying a Group III source gas at a flow rate A2 (0<A2). The first step and the second step are repeated a plurality of times to form a p-AlxGa1-xN (0≦̸x<1) layer, and the flow rate A1 is a flow rate which allows no p-AlxGa1-xN layer to grow and satisfies A1≦̸0.5A2.
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| 申请公布号 |
US2012248387(A1) |
申请公布日期 |
2012.10.04 |
| 申请号 |
US201013512747 |
申请日期 |
2010.12.10 |
| 申请人 |
OOSHIKA YOSHIKAZU;MATSUURA TETSUYA;DOWA ELECTRONICS MATERIALS CO., LTD. |
发明人 |
OOSHIKA YOSHIKAZU;MATSUURA TETSUYA |
| 分类号 |
H01B1/06 |
主分类号 |
H01B1/06 |
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