| 摘要 |
In order to control a temperature of a wafer with high accuracy, there is provided a temperature controlling method including retrieving a result of measuring a kind of a film formed on a rear surface of the wafer; selecting a temperature of the wafer corresponding to an electric power supplied to process the wafer and the kind of the film formed on the rear surface of the wafer, which is the measurement result, from a first database, in which the electric power supplied to a chamber, the kind of the film formed on the rear surface of the wafer, and the temperature of the wafer are stored to be linked to one another; and adjusting the temperature of the wafer based on the selected temperature of the wafer. |
