Silicon nitride coated crucibles for holding melted semiconductor material and for use in preparing multicrystalline silicon ingots by a directional solidification process; methods for coating crucibles; methods for preparing silicon ingots and wafers; compositions for coating crucibles and silicon ingots and wafers with a low oxygen content.
申请公布号
US2012252950(A1)
申请公布日期
2012.10.04
申请号
US201213473347
申请日期
2012.05.16
申请人
PHILLIPS RICHARD J.;KIMBEL STEVEN L.;DESHPANDE ADITYA J.;SHI GANG;MEMC SINGAPORE PTE LTD. (UEN200614794D)
发明人
PHILLIPS RICHARD J.;KIMBEL STEVEN L.;DESHPANDE ADITYA J.;SHI GANG