| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide various semiconductor structures including strain-absorbing III-Nitride interlayer modules. <P>SOLUTION: The semiconductor structure comprises a substrate and a first transition body over the substrate. The first transition body has a first lattice parameter at a first surface and a second lattice parameter at a second surface opposite the first surface. The semiconductor structure further comprises a second transition body, such as a transition module, having a smaller lattice parameter at a lower surface overlying the second surface of the first transition body and a larger lattice parameter at an upper surface of the second transition body, as well as a III-Nitride semiconductor layer over the second transition body. The second transition body may consist of two or more transition modules, and each of the transition modules may include two or more interlayers. The first and second transition bodies reduce strain for the semiconductor structures. <P>COPYRIGHT: (C)2013,JPO&INPIT |
