发明名称 MEMORY STORAGE DEVICE, MEMORY CONTROLLER, AND DATA WRITING METHOD
摘要 A memory storage device, a memory controller, and a data writing method are provided. The memory storage device has a rewritable non-volatile memory chip including a plurality of physical units, and each of the physical units has a plurality of physical pages. The data writing method includes configuring a plurality of logical units to be mapped to a portion of the physical units, and each of the logical unit has a plurality of logical pages. The data writing method also includes receiving a first write data from a host system and writing the first write data into the ith physical page in a substitute physical unit selected from the physical units. The data writing method further includes writing a first address access information corresponding to the first write data and a second address access information into the ith physical page. Herein i is a positive integer.
申请公布号 US2012254511(A1) 申请公布日期 2012.10.04
申请号 US201113111959 申请日期 2011.05.20
申请人 YEH CHIH-KANG;PHISON ELECTRONICS CORP. 发明人 YEH CHIH-KANG
分类号 G06F12/00 主分类号 G06F12/00
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