发明名称 |
METHOD AND APPARATUS FOR THE SELECTIVE DEPOSITION OF EPITAXIAL GERMANIUM STRESSOR ALLOYS |
摘要 |
A method and apparatus for forming heterojunction stressor layers is described. A germanium precursor and a metal precursor are provided to a chamber, and an epitaxial layer of germanium-metal alloy formed on the substrate. The metal precursor is typically a metal halide, which may be provided by subliming a solid metal halide or by contacting a pure metal with a halogen gas. The precursors may be provided through a showerhead or through a side entry point, and an exhaust system coupled to the chamber may be separately heated to manage condensation of exhaust components. |
申请公布号 |
WO2012134512(A1) |
申请公布日期 |
2012.10.04 |
申请号 |
WO2011US45795 |
申请日期 |
2011.07.28 |
申请人 |
APPLIED MATERIALS, INC.;SANCHEZ, ERROL ANTONIO C.;CARLSON, DAVID K. |
发明人 |
SANCHEZ, ERROL ANTONIO C.;CARLSON, DAVID K. |
分类号 |
H01L21/20;H01L21/205;H01L21/8238 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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