| 摘要 |
<p>A photovoltaic device (10) comprises: a crystalline semiconductor layer (12) of one conductivity type; an intrinsic amorphous semiconductor layer (14) formed on one of the surfaces of the crystalline semiconductor layer; a particle-containing layer (16) formed on the intrinsic amorphous semiconductor layer and containing semiconductor particles; and a first amorphous semiconductor layer (18) of the opposite conductivity type with respect to the crystalline semiconductor layer, or an amorphous semiconductor layer of the same one conductivity type as the crystalline semiconductor layer, formed on the particle-containing layer. The semiconductor particles include particles having a particle size in the range of 4 to 7nm.</p> |
