发明名称 METHOD FOR PRODUCING ORGANIC TRANSISTOR
摘要 <p>A production method for forming an organic transistor on a substrate, wherein a simple and high-quality organic transistor element is obtained by manufacturing the organic transistor through steps comprising: a step for forming a gate electrode and a source/drain wiring on a substrate; a step for forming a gate insulating film on the gate electrode; a step for forming a photosensitive high-concentration carrier film on the gate insulating film; a step for using the gate insulating film as a mask and photosensitizing the photosensitive high-concentration carrier film to thereby form a high-concentration carrier film wiring in contact with the source/drain wiring; and a step for disposing an organic semiconductor film in gaps in the high-concentration carrier film wiring.</p>
申请公布号 WO2012132487(A1) 申请公布日期 2012.10.04
申请号 WO2012JP50294 申请日期 2012.01.11
申请人 SEIKO INSTRUMENTS INC.;SUGINOYA, MITSURU;KOBAYASHI, TOMOATSU;ISHISONE, NOBORU 发明人 SUGINOYA, MITSURU;KOBAYASHI, TOMOATSU;ISHISONE, NOBORU
分类号 H01L21/336;H01L21/28;H01L21/288;H01L21/3205;H01L21/768;H01L23/52;H01L29/417;H01L29/786;H01L51/05;H01L51/40 主分类号 H01L21/336
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