发明名称 |
METHOD FOR PRODUCING ORGANIC TRANSISTOR |
摘要 |
<p>A production method for forming an organic transistor on a substrate, wherein a simple and high-quality organic transistor element is obtained by manufacturing the organic transistor through steps comprising: a step for forming a gate electrode and a source/drain wiring on a substrate; a step for forming a gate insulating film on the gate electrode; a step for forming a photosensitive high-concentration carrier film on the gate insulating film; a step for using the gate insulating film as a mask and photosensitizing the photosensitive high-concentration carrier film to thereby form a high-concentration carrier film wiring in contact with the source/drain wiring; and a step for disposing an organic semiconductor film in gaps in the high-concentration carrier film wiring.</p> |
申请公布号 |
WO2012132487(A1) |
申请公布日期 |
2012.10.04 |
申请号 |
WO2012JP50294 |
申请日期 |
2012.01.11 |
申请人 |
SEIKO INSTRUMENTS INC.;SUGINOYA, MITSURU;KOBAYASHI, TOMOATSU;ISHISONE, NOBORU |
发明人 |
SUGINOYA, MITSURU;KOBAYASHI, TOMOATSU;ISHISONE, NOBORU |
分类号 |
H01L21/336;H01L21/28;H01L21/288;H01L21/3205;H01L21/768;H01L23/52;H01L29/417;H01L29/786;H01L51/05;H01L51/40 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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