| 摘要 |
<P>PROBLEM TO BE SOLVED: To establish a film-forming technique of forming a new cubic boron nitride film having improved hydrophilicity, and to provide the new cubic boron nitride film based on the film-forming technique and a method for producing the same. <P>SOLUTION: The method for producing the hydrophilic cubic boron nitride film includes: a step of performing low pressure plasma etching under a hydrogen gas atmosphere while applying a substrate bias voltage to a film which is formed on a substrate whose entire component or main component is a metal or silicon, wherein the entire component or main component of the film is a cubic boron nitride (cBN) containing fluorine atoms. <P>COPYRIGHT: (C)2013,JPO&INPIT |
