发明名称 |
METHOD OF FORMING METAL INTERCONNECTIONS OF SEMICONDUCTOR DEVICE |
摘要 |
A method of forming a metal interconnection of semiconductor device is provided. The method includes forming a low-k dielectric layer including an opening; forming a barrier metal pattern conformally covering a bottom surface and an inner sidewall of the opening; forming a metal pattern exposing a part of the inner sidewall of the barrier metal pattern in the opening; forming a metal capping layer on the top surfaces of the metal pattern and the low-k dielectric layer using a selective chemical vapor deposition process, wherein the thickness of the metal capping layer on the metal pattern is greater than the thickness of the metal capping layer on the low-k dielectric layer; and forming a metal capping pattern covering the top surface of the metal pattern by planarizing the metal capping layer down to the top surface of the low-k dielectric layer.
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申请公布号 |
US2012252208(A1) |
申请公布日期 |
2012.10.04 |
申请号 |
US201213431446 |
申请日期 |
2012.03.27 |
申请人 |
JANG WOOJIN;LEE KYOUNGWOO |
发明人 |
JANG WOOJIN;LEE KYOUNGWOO |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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