发明名称 |
PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, AND STORAGE MEDIUM |
摘要 |
Provided is a parallel flat-panel type plasma processing apparatus which includes a recipe storing unit storing a processing recipe for performing a plasma processing, a compensation setting unit setting an accumulation time of the plasma processing or the number of processed substrates after starting using a new second electrode and the compensation value of the set temperature of the second electrode in an input screen, and a storage unit storing the compensated set value. The plasma processing apparatus is further equipped with a program for controlling a temperature adjusting mechanism based on a set temperature after compensation by adding a set temperature of an upper electrode written in the processing recipe to the compensation value stored within the storage unit. As a result, the non-uniformity in the plasma processing between the substrates caused by the change of processing atmosphere is suppressed.
|
申请公布号 |
US2012248067(A1) |
申请公布日期 |
2012.10.04 |
申请号 |
US201213434284 |
申请日期 |
2012.03.29 |
申请人 |
OGI TATSUYA;OZAWA WATARU;FUKASAWA KIMIHIRO;KANAYA KAZUHIRO;TOKYO ELECTRON LIMITED |
发明人 |
OGI TATSUYA;OZAWA WATARU;FUKASAWA KIMIHIRO;KANAYA KAZUHIRO |
分类号 |
B44C1/22;B05C9/00;B05C11/00 |
主分类号 |
B44C1/22 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|