发明名称 PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, AND STORAGE MEDIUM
摘要 Provided is a parallel flat-panel type plasma processing apparatus which includes a recipe storing unit storing a processing recipe for performing a plasma processing, a compensation setting unit setting an accumulation time of the plasma processing or the number of processed substrates after starting using a new second electrode and the compensation value of the set temperature of the second electrode in an input screen, and a storage unit storing the compensated set value. The plasma processing apparatus is further equipped with a program for controlling a temperature adjusting mechanism based on a set temperature after compensation by adding a set temperature of an upper electrode written in the processing recipe to the compensation value stored within the storage unit. As a result, the non-uniformity in the plasma processing between the substrates caused by the change of processing atmosphere is suppressed.
申请公布号 US2012248067(A1) 申请公布日期 2012.10.04
申请号 US201213434284 申请日期 2012.03.29
申请人 OGI TATSUYA;OZAWA WATARU;FUKASAWA KIMIHIRO;KANAYA KAZUHIRO;TOKYO ELECTRON LIMITED 发明人 OGI TATSUYA;OZAWA WATARU;FUKASAWA KIMIHIRO;KANAYA KAZUHIRO
分类号 B44C1/22;B05C9/00;B05C11/00 主分类号 B44C1/22
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