| 摘要 |
Methods and devices for sensing non-volatile storage devices in a way that reduces read disturb are disclosed. Techniques are used to reduce read disturb on memory cells that are neighbors to selected memory cells. For example, on a NAND string, the memory cells that are next to the selected memory cell presently being read may benefit. In one embodiment, when reading memory cells on a selected word line WLn, Vread+Delta is applied to WLn+2 and WLn−2. Applying Vread+Delta to the second neighbor word line may reduce read disturb to memory cells on the neighbor word line WLn+1.
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