SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME

摘要

In a conventional trench-type junction FET employing a silicon carbide substrate, the proportion of surface area of the element occupied by the pn junction between the gate and the drain is large, the capacity between the gate and the drain is large, and problems are associated therewith. This invention accordingly provides a trench-type junction FET having reduced capacity between the gate and the drain, without diminishing the withstand voltage, on resistance, or gate characteristics. Specifically, a p region (4) of the gate is formed in the upper side wall of a trench (11). Further, a p region (6) that shorts the source is formed at the trench bottom. The distance between this p region (6) and the p region (4) of the gate extends in a perpendicular direction with respect to the substrate surface.