发明名称 |
TRANSFER MASK, METHOD OF MANUFACTURING A TRANSFER MASK, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE |
摘要 |
Provided is a transfer mask which has a transfer pattern formed in a pattern-forming thin film provided on a transparent substrate and is adapted to be applied with exposure light having a wavelength of 200 nm or less. The pattern-forming thin film is made of a material containing silicon an a transition metal other than chromium and the chromium content in the film is less than 1.0×1018 atoms/cm3. |
申请公布号 |
US2012251931(A1) |
申请公布日期 |
2012.10.04 |
申请号 |
US201013501348 |
申请日期 |
2010.10.08 |
申请人 |
HASHIMOTO MASAHIRO;SAKAI KAZUYA;SUZUKI TOSHIYUKI;ONO KAZUNORI;HOYA CORPORATION |
发明人 |
HASHIMOTO MASAHIRO;SAKAI KAZUYA;SUZUKI TOSHIYUKI;ONO KAZUNORI |
分类号 |
G03F1/00;G03F1/26;G03F1/32;G03F1/46;G03F1/54;G03F1/76;G03F1/82;G03F7/20 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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