DIFFERENTIAL TEMPERATURE SENSOR AND ITS CMOS/BICMOS TECHNOLOGY CAPABILITIES

摘要

The sensor is made on a semiconducting substrate (20) covered with an electrically insulating layer (21). The electrically insulating layer (21) separates a thermocouple (15) from the substrate (20). It comprises a first portion (21') exhibiting a first value of capacitance per unit area and a second portion (21") exhibiting a second value of capacitance per unit area which is smaller than the first value. The sensor comprises first (S1) and second (S2) output terminals linked to the thermocouple (15). The first output terminal (S1) comprises a first capacitor (I-1) having a first electrode formed by a first bar (13) made of an electrically conducting material. The second electrode of the capacitor (I-1) is formed by a part of the substrate (20) facing the said first bar (13) and separated from the first electrode by the first portion (21') of the electrically insulating layer. The first bar (13) links the thermocouple (15) while overlapping the second portion (21") of the electrically insulating layer.