NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

A nitride semiconductor device which is provided with: a substrate; an electron transit layer; an electron supply layer having a band gap energy different from that of the electron transit layer; a drain electrode; a gate electrode; and a source electrode that is formed opposite to the drain electrode with the gate electrode being interposed therebetween. In this connection, the electron transit layer, the electron supply layer, the drain electrode, the gate electrode and the source electrode are sequentially formed above the substrate. The surface of the electron transit layer between the gate electrode and the drain electrode is provided with a plurality of low-concentration regions, in which the concentration of the two-dimensional electron gas is lower than that in the other regions, so that the low-concentration regions are apart from each other.