INORGANIC NANOSTRUCTURE REACTIVE DIRECT-WRITE AND GROWTH

摘要

Methods for forming inorganic nanostructures are provided. The methods create the inorganic nanostructures by positioning a writing electrode (e.g.. a conductive "stamp") spaced nanometers above a substrate such that a precursor is intermediate the two. Applying an electric field, a voltage bias, an ionic current, or an electronic current between the writing electrode and the substrate converts the precursor into an inorganic solid material (e.g., a semiconductor such as silicon or germanium) in the area of the writing electrode.